Miller's Approximation in VLSI and Power Bipolar Transistors with Reach-Through Collectors
نویسندگان
چکیده
Using a modified ionization model based on nonlocal impact ionization, Miller's relationship is examined for typical reach-through collector VLSI bipolar transistors with collector epi-thickness between 0.025 and 1 /im. The empirical parameter n in Miller's relationship is evaluated under nonlocal impact ionization conditions within the useful range of current gain which corresponds to 0.1 > 1 — 1/M > 0.005. The validity of Miller's relationship is also examined for power bipolar transistors having reach-through collectors (Wepi < Wpt) using local ionization model and design curves for the empirical parameter n are provided for different collector structures. still flows out even tin the depletion isolation operation. This is one of the major differences between nonfully-depleted SGT's and PD thin-film SOI devices, which mitigates the floating-body effect in SGT's.
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